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Semiconductor Devices Test - 85
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Semiconductor Devices Test - 85

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  • Question 1/10
    4 / -1
    When phosphorus and antimony are mixed ingermanium, then
  • Question 2/10
    4 / -1
    To a germanium sample, traces of gallium are added as an impurity. The resultant sample would behave like
  • Question 3/10
    4 / -1
    The energy gap of silicon is 1.14 eV. The maximum wavelength at which silicon will begin absorbingenergy is
    Solutions

  • Question 4/10
    4 / -1
    The charge on a hole is equal to the charge of
  • Question 5/10
    4 / -1
    When germanium is doped with phosphorus, the dopedmaterial has
  • Question 6/10
    4 / -1
    A Ge specimen is doped with Al. The concentration of acceptor atoms is ~1021 atoms/m3. Given that the intrinsic concentration of electron hole pairs is ~1019 / m3, the concentration of electrons in thespecimen is
    Solutions

  • Question 7/10
    4 / -1
    Which of the following has negative temperature coefficient of resistance?
  • Question 8/10
    4 / -1
    In semiconductors at a room temperature
  • Question 9/10
    4 / -1
    Regarding a semiconductor which one of the following is wrong?
  • Question 10/10
    4 / -1
    Which of the following statements is true for an N–type semiconductor?
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