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Semiconductor Devices Test - 90
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Semiconductor Devices Test - 90

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  • Question 1/10
    4 / -1
    In order to forward bias a PN junction, the negativeterminal of battery is connected to
  • Question 2/10
    4 / -1
    The diode shown in the circuit is a silicon diode. The potential difference between the points A and B will be

  • Question 3/10
    4 / -1
    Zener breakdown takes place if
  • Question 4/10
    4 / -1
    Consider the following statements A and B and identify the correct choice of the given answers (A) A zener diode is always connected in reverse bias (B) The potential barrier of a PN junction lies between 0.1 to 0.3 V approximately
  • Question 5/10
    4 / -1
    The correct symbol for zener diode is
  • Question 6/10
    4 / -1
    No bias is applied to a P — N junction, then the current
  • Question 7/10
    4 / -1
    Zener diode is used as
  • Question 8/10
    4 / -1
    The width of forbidden gap in silicon crystal is 1.1 eV. When the crystal is converted into a N–type semiconductor the distance of Fermi level from conduction band is
  • Question 9/10
    4 / -1
    In P – N junction, the barrier potential offers resistance to
  • Question 10/10
    4 / -1
    Symbolic representation of photodiode is
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