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Solution
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Q.1 Correct
Q.1 In-correct
Q.1 Unattempt

Which of the following circuits represents a forward biased diode?

JEE Main 2025 (Online) 22nd January Morning Shift Physics - Semiconductor Question 16 English

Choose the correct answer from the options given below:



JEE Main 2025 (Online) 22nd January Morning Shift

Which of the following circuits represents a forward biased diode?

JEE Main 2025 (Online) 22nd January Morning Shift Physics - Semiconductor Question 16 English

Choose the correct answer from the options given below:



JEE Main 2025 (Online) 22nd January Morning Shift
Q.2 Correct
Q.2 In-correct
Q.2 Unattempt

JEE Main 2025 (Online) 22nd January Evening Shift Physics - Semiconductor Question 15 English

To obtain the given truth table, following logic gate should be placed at G :



JEE Main 2025 (Online) 22nd January Evening Shift

JEE Main 2025 (Online) 22nd January Evening Shift Physics - Semiconductor Question 15 English

To obtain the given truth table, following logic gate should be placed at G :



JEE Main 2025 (Online) 22nd January Evening Shift
Q.3 Correct
Q.3 In-correct
Q.3 Unattempt

Refer to the circuit diagram given in the figure. which of the following observations are correct?

A. Total resistance of circuit is $6 \Omega$

B. Current in Ammeter is 1 A

C. Potential across $A B$ is 4 Volts.

D. Potential across CD is 4 Volts

E. Total resistance of the circuit is $8 \Omega$.

Choose the correct answer from the options given below:

JEE Main 2025 (Online) 23rd January Morning Shift Physics - Semiconductor Question 14 English



JEE Main 2025 (Online) 23rd January Morning Shift

Refer to the circuit diagram given in the figure. which of the following observations are correct?

A. Total resistance of circuit is $6 \Omega$

B. Current in Ammeter is 1 A

C. Potential across $A B$ is 4 Volts.

D. Potential across CD is 4 Volts

E. Total resistance of the circuit is $8 \Omega$.

Choose the correct answer from the options given below:

JEE Main 2025 (Online) 23rd January Morning Shift Physics - Semiconductor Question 14 English



JEE Main 2025 (Online) 23rd January Morning Shift
Q.4 Correct
Q.4 In-correct
Q.4 Unattempt

What is the current through the battery in the circuit shown below?

JEE Main 2025 (Online) 23rd January Evening Shift Physics - Semiconductor Question 13 English



JEE Main 2025 (Online) 23rd January Evening Shift

What is the current through the battery in the circuit shown below?

JEE Main 2025 (Online) 23rd January Evening Shift Physics - Semiconductor Question 13 English



JEE Main 2025 (Online) 23rd January Evening Shift
Q.5 Correct
Q.5 In-correct
Q.5 Unattempt

Consider the following statements :

A. The junction area of solar cell is made very narrow compared to a photo diode.

B. Solar cells are not connected with any external bias.

C. LED is made of lightly doped p-n junction.

D. Increase of forward current results in continuous increase of LED light intensity.

E. LEDs have to be connected in forward bias for emission of light.

Choose the correct answer from the options given below :



JEE Main 2025 (Online) 24th January Morning Shift

Consider the following statements :

A. The junction area of solar cell is made very narrow compared to a photo diode.

B. Solar cells are not connected with any external bias.

C. LED is made of lightly doped p-n junction.

D. Increase of forward current results in continuous increase of LED light intensity.

E. LEDs have to be connected in forward bias for emission of light.

Choose the correct answer from the options given below :



JEE Main 2025 (Online) 24th January Morning Shift
Q.6 Correct
Q.6 In-correct
Q.6 Unattempt

The output of the circuit is low (zero) for :

JEE Main 2025 (Online) 24th January Evening Shift Physics - Semiconductor Question 11 English

(A) $X=0, Y=0$

(B) $X=0, Y=1$

(C) $X=1, Y=0$

(D) $X=1, Y=1$

Choose the correct answer from the options given below :



JEE Main 2025 (Online) 24th January Evening Shift

The output of the circuit is low (zero) for :

JEE Main 2025 (Online) 24th January Evening Shift Physics - Semiconductor Question 11 English

(A) $X=0, Y=0$

(B) $X=0, Y=1$

(C) $X=1, Y=0$

(D) $X=1, Y=1$

Choose the correct answer from the options given below :



JEE Main 2025 (Online) 24th January Evening Shift
Q.7 Correct
Q.7 In-correct
Q.7 Unattempt

Which of the following circuits has the same output as that of the given circuit?

JEE Main 2025 (Online) 28th January Morning Shift Physics - Semiconductor Question 10 English



JEE Main 2025 (Online) 28th January Morning Shift

Which of the following circuits has the same output as that of the given circuit?

JEE Main 2025 (Online) 28th January Morning Shift Physics - Semiconductor Question 10 English



JEE Main 2025 (Online) 28th January Morning Shift
Q.8 Correct
Q.8 In-correct
Q.8 Unattempt
JEE Main 2025 (Online) 29th January Morning Shift Physics - Semiconductor Question 18 English

For the circuit shown above, equivalent GATE is :



JEE Main 2025 (Online) 29th January Morning Shift
JEE Main 2025 (Online) 29th January Morning Shift Physics - Semiconductor Question 18 English

For the circuit shown above, equivalent GATE is :



JEE Main 2025 (Online) 29th January Morning Shift
Q.9 Correct
Q.9 In-correct
Q.9 Unattempt

The truth table for the circuit given below is:

JEE Main 2025 (Online) 29th January Evening Shift Physics - Semiconductor Question 17 English

JEE Main 2025 (Online) 29th January Evening Shift

The truth table for the circuit given below is:

JEE Main 2025 (Online) 29th January Evening Shift Physics - Semiconductor Question 17 English

JEE Main 2025 (Online) 29th January Evening Shift
Q.10 Correct
Q.10 In-correct
Q.10 Unattempt

A zener diode with 5 V zener voltage is used to regulate an unregulated dc voltage input of 25 V . For a $400 \Omega$ resistor connected in series, the zener current is found to be 4 times load current. The load current $\left(I_L\right)$ and load resistance $\left(R_L\right)$ are :



JEE Main 2025 (Online) 2nd April Morning Shift

A zener diode with 5 V zener voltage is used to regulate an unregulated dc voltage input of 25 V . For a $400 \Omega$ resistor connected in series, the zener current is found to be 4 times load current. The load current $\left(I_L\right)$ and load resistance $\left(R_L\right)$ are :



JEE Main 2025 (Online) 2nd April Morning Shift
Q.11 Correct
Q.11 In-correct
Q.11 Unattempt

In the digital circuit shown in the figure, for the given inputs the P and Q values are : 

JEE Main 2025 (Online) 2nd April Evening Shift Physics - Semiconductor Question 7 English

JEE Main 2025 (Online) 2nd April Evening Shift

In the digital circuit shown in the figure, for the given inputs the P and Q values are : 

JEE Main 2025 (Online) 2nd April Evening Shift Physics - Semiconductor Question 7 English

JEE Main 2025 (Online) 2nd April Evening Shift
Q.12 Correct
Q.12 In-correct
Q.12 Unattempt

Choose the correct logic circuit for the given truth table having inputs A and B.

Inputs Output
A B Y
0 0 0
0 1 0
1 0 1
1 1 1

JEE Main 2025 (Online) 3rd April Morning Shift

Choose the correct logic circuit for the given truth table having inputs A and B.

Inputs Output
A B Y
0 0 0
0 1 0
1 0 1
1 1 1

JEE Main 2025 (Online) 3rd April Morning Shift
Q.13 Correct
Q.13 In-correct
Q.13 Unattempt

$$ \text {The truth table corresponding to the circuit given below is: } $$

JEE Main 2025 (Online) 3rd April Evening Shift Physics - Semiconductor Question 1 English

JEE Main 2025 (Online) 3rd April Evening Shift

$$ \text {The truth table corresponding to the circuit given below is: } $$

JEE Main 2025 (Online) 3rd April Evening Shift Physics - Semiconductor Question 1 English

JEE Main 2025 (Online) 3rd April Evening Shift
Q.14 Correct
Q.14 In-correct
Q.14 Unattempt

The Boolean expression $\mathrm{Y}=A \bar{B} C+\bar{A} \bar{C}$ can be realised with which of the following gate configurations.

A. One 3-input AND gate, 3 NOT gates and one 2-input OR gate, One 2-input AND gate,

B. One 3 -input AND gate, 1 NOT gate, One 2 -input NOR gate and one 2 -input OR gate

C. 3 -input OR gate, 3 NOT gates and one 2 -input AND gate

Choose the correct answer from the options given below:



JEE Main 2025 (Online) 4th April Morning Shift

The Boolean expression $\mathrm{Y}=A \bar{B} C+\bar{A} \bar{C}$ can be realised with which of the following gate configurations.

A. One 3-input AND gate, 3 NOT gates and one 2-input OR gate, One 2-input AND gate,

B. One 3 -input AND gate, 1 NOT gate, One 2 -input NOR gate and one 2 -input OR gate

C. 3 -input OR gate, 3 NOT gates and one 2 -input AND gate

Choose the correct answer from the options given below:



JEE Main 2025 (Online) 4th April Morning Shift
Q.15 Correct
Q.15 In-correct
Q.15 Unattempt

Consider a n-type semiconductor in which $\mathrm{n}_{\mathrm{e}}$ and $\mathrm{n}_{\mathrm{h}}$ are number of electrons and holes, respectively.

(A) Holes are minority carriers

(B) The dopant is a pentavalent atom

(C) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \neq \mathrm{n}_i^2$

(where $\mathrm{n}_i$ is number of electrons or holes in semiconductor when it is intrinsic form)

(D) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \geqslant \mathrm{n}_i^2$

(E) The holes are not generated due to the donors

Choose the correct answer from the options given below :



JEE Main 2025 (Online) 4th April Evening Shift

Consider a n-type semiconductor in which $\mathrm{n}_{\mathrm{e}}$ and $\mathrm{n}_{\mathrm{h}}$ are number of electrons and holes, respectively.

(A) Holes are minority carriers

(B) The dopant is a pentavalent atom

(C) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \neq \mathrm{n}_i^2$

(where $\mathrm{n}_i$ is number of electrons or holes in semiconductor when it is intrinsic form)

(D) $\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}} \geqslant \mathrm{n}_i^2$

(E) The holes are not generated due to the donors

Choose the correct answer from the options given below :



JEE Main 2025 (Online) 4th April Evening Shift
Q.16 Correct
Q.16 In-correct
Q.16 Unattempt

In the following circuit, the reading of the ammeter will be

$($ Take Zener breakdown voltage $=4 \mathrm{~V})$

JEE Main 2025 (Online) 7th April Morning Shift Physics - Semiconductor Question 6 English

JEE Main 2025 (Online) 7th April Morning Shift

In the following circuit, the reading of the ammeter will be

$($ Take Zener breakdown voltage $=4 \mathrm{~V})$

JEE Main 2025 (Online) 7th April Morning Shift Physics - Semiconductor Question 6 English

JEE Main 2025 (Online) 7th April Morning Shift
Q.17 Correct
Q.17 In-correct
Q.17 Unattempt

Consider the following logic circuit.

JEE Main 2025 (Online) 7th April Evening Shift Physics - Semiconductor Question 5 English

The output is Y = 0 when :



JEE Main 2025 (Online) 7th April Evening Shift

Consider the following logic circuit.

JEE Main 2025 (Online) 7th April Evening Shift Physics - Semiconductor Question 5 English

The output is Y = 0 when :



JEE Main 2025 (Online) 7th April Evening Shift
Q.18 Correct
Q.18 In-correct
Q.18 Unattempt

The output voltage in the following circuit is (Consider ideal diode case)

JEE Main 2025 (Online) 8th April Evening Shift Physics - Semiconductor Question 9 English

JEE Main 2025 (Online) 8th April Evening Shift

The output voltage in the following circuit is (Consider ideal diode case)

JEE Main 2025 (Online) 8th April Evening Shift Physics - Semiconductor Question 9 English

JEE Main 2025 (Online) 8th April Evening Shift
Q.19 Correct
Q.19 In-correct
Q.19 Unattempt
Which of the following circuits is reverse - biased ?
[27-Jan-2024 Shift 1]
Which of the following circuits is reverse - biased ?
[27-Jan-2024 Shift 1]
Q.20 Correct
Q.20 In-correct
Q.20 Unattempt
The truth table of the given circuit diagram is:

[27-Jan-2024 Shift 2]
The truth table of the given circuit diagram is:

[27-Jan-2024 Shift 2]
Q.21 Correct
Q.21 In-correct
Q.21 Unattempt
In the given circuit, the breakdown voltage of the Zener diode is 3.0V. What is the value of Iz ?

[29-Jan-2024 Shift 1]
In the given circuit, the breakdown voltage of the Zener diode is 3.0V. What is the value of Iz ?

[29-Jan-2024 Shift 1]
Q.22 Correct
Q.22 In-correct
Q.22 Unattempt
The truth table for this given circuit is :

[29-Jan-2024 Shift 2]
The truth table for this given circuit is :

[29-Jan-2024 Shift 2]
Q.23 Correct
Q.23 In-correct
Q.23 Unattempt
A Zener diode of breakdown voltage 10V is used as a voltage regulator as shown in the figure. The current through the Zener diode is

[30-Jan-2024 Shift 1]
A Zener diode of breakdown voltage 10V is used as a voltage regulator as shown in the figure. The current through the Zener diode is

[30-Jan-2024 Shift 1]
Q.24 Correct
Q.24 In-correct
Q.24 Unattempt
In the given circuit, the voltage across load resistance (RL) is:

[30-Jan-2024 Shift 2]
In the given circuit, the voltage across load resistance (RL) is:

[30-Jan-2024 Shift 2]
Q.25 Correct
Q.25 In-correct
Q.25 Unattempt
Identify the logic operation performed by the given circuit.

[31-Jan-2024 Shift 1]
Identify the logic operation performed by the given circuit.

[31-Jan-2024 Shift 1]
Q.26 Correct
Q.26 In-correct
Q.26 Unattempt
The output of the given circuit diagram is

[31-Jan-2024 Shift 2]
The output of the given circuit diagram is

[31-Jan-2024 Shift 2]
Q.27 Correct
Q.27 In-correct
Q.27 Unattempt
In the given circuit if the power rating of Zener diode is 10‌mW, the value of series resistance Rs to regulate the input unregulated supply is :

[1-Feb-2024 Shift 1]
In the given circuit if the power rating of Zener diode is 10‌mW, the value of series resistance Rs to regulate the input unregulated supply is :

[1-Feb-2024 Shift 1]
Q.28 Correct
Q.28 In-correct
Q.28 Unattempt
Conductivity of a photodiode starts changing only if the wavelength of incident light is less than 660‌nm. The band gap of photodiode is found to be (‌
X
8
)‌eV. The value of X is :
(Given, h=6.6×10−34‌Js,e=1.6×10−19C )
[1-Feb-2024 Shift 2]
Conductivity of a photodiode starts changing only if the wavelength of incident light is less than 660‌nm. The band gap of photodiode is found to be (‌
X
8
)‌eV. The value of X is :
(Given, h=6.6×10−34‌Js,e=1.6×10−19C )
[1-Feb-2024 Shift 2]
Q.29 Correct
Q.29 In-correct
Q.29 Unattempt
Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason R : The current in the forward bias is more than the current in the reverse bias for a p−n junction diode.
In the light of the above statement, choose the correct answer from the options given below :
[24-Jan-2023 Shift 1]
Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason R : The current in the forward bias is more than the current in the reverse bias for a p−n junction diode.
In the light of the above statement, choose the correct answer from the options given below :
[24-Jan-2023 Shift 1]
Q.30 Correct
Q.30 In-correct
Q.30 Unattempt
The logic gate equivalent to the given circuit diagram is :

[24-Jan-2023 Shift 2]
The logic gate equivalent to the given circuit diagram is :

[24-Jan-2023 Shift 2]
Q.31 Correct
Q.31 In-correct
Q.31 Unattempt
Given below are two statements : one is labeled as Assertion A and the other is labeled as Reason R
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R: For a p-n junction diode, at applied voltage V the current in the forward bias is more than the current in the reverse bias for |Vz
‌
‌
|>±V≥|V0
‌
‌
| where Vo is the threshold voltage and Vz is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below
[25-Jan-2023 Shift 1]
Given below are two statements : one is labeled as Assertion A and the other is labeled as Reason R
Assertion A: Photodiodes are used in forward bias usually for measuring the light intensity.
Reason R: For a p-n junction diode, at applied voltage V the current in the forward bias is more than the current in the reverse bias for |Vz
‌
‌
|>±V≥|V0
‌
‌
| where Vo is the threshold voltage and Vz is the breakdown voltage.
In the light of the above statements, choose the correct answer from the options given below
[25-Jan-2023 Shift 1]
Q.32 Correct
Q.32 In-correct
Q.32 Unattempt
Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
Statement II : When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below. Options:
[25-Jan-2023 Shift 2]
Statement I : When a Si sample is doped with Boron, it becomes P type and when doped by Arsenic it becomes N-type semi conductor such that P-type has excess holes and N-type has excess electrons.
Statement II : When such P-type and N-type semi-conductors, are fused to make a junction, a current will automatically flow which can be detected with an externally connected ammeter.
In the light of above statements, choose the most appropriate answer from the options given below. Options:
[25-Jan-2023 Shift 2]
Q.33 Correct
Q.33 In-correct
Q.33 Unattempt
Which of the following statement is not correct in the case of light emitting diodes?
A. It is a heavily doped p−n junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below :
[29-Jan-2023 Shift 1]
Which of the following statement is not correct in the case of light emitting diodes?
A. It is a heavily doped p−n junction.
B. It emits light only when it is forward biased.
C. It emits light only when it is reverse biased.
D. The energy of the light emitted is equal to or slightly less than the energy gap of the semiconductor used.
Choose the correct answer from the options given below :
[29-Jan-2023 Shift 1]
Q.34 Correct
Q.34 In-correct
Q.34 Unattempt
For the given logic gates combination, the correct truth table will be

[29-Jan-2023 Shift 2]
For the given logic gates combination, the correct truth table will be

[29-Jan-2023 Shift 2]
Q.35 Correct
Q.35 In-correct
Q.35 Unattempt
The output waveform of the given logical circuit for the following inputs A and B as shown below, is:

[30-Jan-2023 Shift 1]
The output waveform of the given logical circuit for the following inputs A and B as shown below, is:

[30-Jan-2023 Shift 1]
Q.36 Correct
Q.36 In-correct
Q.36 Unattempt
The output Y for the inputs A and B of circuit is given by

Truth table of the shown circuit is :
[30-Jan-2023 Shift 2]
The output Y for the inputs A and B of circuit is given by

Truth table of the shown circuit is :
[30-Jan-2023 Shift 2]
Q.37 Correct
Q.37 In-correct
Q.37 Unattempt
The effect of increase in temperature on the number of electrons in conduction band (ne) and resistance of a semiconductor will be as:
[31-Jan-2023 Shift 1]
The effect of increase in temperature on the number of electrons in conduction band (ne) and resistance of a semiconductor will be as:
[31-Jan-2023 Shift 1]
Q.38 Correct
Q.38 In-correct
Q.38 Unattempt
Given below are two statements:
Statement I: In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II: In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.
[31-Jan-2023 Shift 2]
Given below are two statements:
Statement I: In a typical transistor, all three regions emitter, base and collector have same doping level.
Statement II: In a transistor, collector is the thickest and base is the thinnest segment.
In the light of the above statements, choose the most appropriate answer from the options given below.
[31-Jan-2023 Shift 2]
Q.39 Correct
Q.39 In-correct
Q.39 Unattempt
Match the List I with List II

Choose the correct answer from the options given below:
[1-Feb-2023 Shift 1]
Match the List I with List II

Choose the correct answer from the options given below:
[1-Feb-2023 Shift 1]
Q.40 Correct
Q.40 In-correct
Q.40 Unattempt
Choose the correct statement about Zener diode:
[1-Feb-2023 Shift 2]
Choose the correct statement about Zener diode:
[1-Feb-2023 Shift 2]
Q.41 Correct
Q.41 In-correct
Q.41 Unattempt
Name the logic gate equivalent to the diagram attached

[6-Apr-2023 shift 1]
Name the logic gate equivalent to the diagram attached

[6-Apr-2023 shift 1]
Q.42 Correct
Q.42 In-correct
Q.42 Unattempt
The resistivity (ρ) of semiconductor varies with temperature. Which of the following curve represents the correct behavior
[6-Apr-2023 shift 1]
The resistivity (ρ) of semiconductor varies with temperature. Which of the following curve represents the correct behavior
[6-Apr-2023 shift 1]
Q.43 Correct
Q.43 In-correct
Q.43 Unattempt
Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below
[6-Apr-2023 shift 2]
Given below are two statements : one is labelled as Assertion A and the other is labelled as Reason R
Assertion A : Diffusion current in a p-n junction is greater than the drift current in magnitude if the junction is forward biased.
Reason R: Diffusion current in a p-n junction is from the n-side to the p-side if the junction is forward biased. In the light of the above statements, choose the most appropriate answer from the options given below
[6-Apr-2023 shift 2]
Q.44 Correct
Q.44 In-correct
Q.44 Unattempt
For the logic circuit shown, the output waveform at Y is:

[8-Apr-2023 shift 1]
For the logic circuit shown, the output waveform at Y is:

[8-Apr-2023 shift 1]
Q.45 Correct
Q.45 In-correct
Q.45 Unattempt
For a given transistor amplifier circuit in CE configuration VCC=1V,RC=1kΩ,Rb=100kΩ and β=100. Value of base current Ib is

[8-Apr-2023 shift 2]
For a given transistor amplifier circuit in CE configuration VCC=1V,RC=1kΩ,Rb=100kΩ and β=100. Value of base current Ib is

[8-Apr-2023 shift 2]
Q.46 Correct
Q.46 In-correct
Q.46 Unattempt
A zener diode of power rating 1.6W is be used as voltage regulator. If the zener diode has a breakdown of 8V and it has to regulate voltage fluctuating between 3V and 10V. The value of resistance R8 for safe operation of diode will be

[10-Apr-2023 shift 1]
A zener diode of power rating 1.6W is be used as voltage regulator. If the zener diode has a breakdown of 8V and it has to regulate voltage fluctuating between 3V and 10V. The value of resistance R8 for safe operation of diode will be

[10-Apr-2023 shift 1]
Q.47 Correct
Q.47 In-correct
Q.47 Unattempt
If each diode has a forward bias resistance of 25Ω in the below circuit,

Which of the following options is correct:
[10-Apr-2023 shift 2]
If each diode has a forward bias resistance of 25Ω in the below circuit,

Which of the following options is correct:
[10-Apr-2023 shift 2]
Q.48 Correct
Q.48 In-correct
Q.48 Unattempt
The logic performed by the circuit shown in figure is equivalent to :

[11-Apr-2023 shift 1]
The logic performed by the circuit shown in figure is equivalent to :

[11-Apr-2023 shift 1]
Q.49 Correct
Q.49 In-correct
Q.49 Unattempt
The logic operations performed by the given digital circuit is equivalent to:
[11-Apr-2023 shift 2]
The logic operations performed by the given digital circuit is equivalent to:

[11-Apr-2023 shift 2]
Q.50 Correct
Q.50 In-correct
Q.50 Unattempt
In an n-p-n common emitter (CE) transistor the collector current changes from 5‌mA to 16‌mA for the change in base current from 100µA and 200µA, respectively. The current gain of transistor is _______.
[12-Apr-2023 shift 1]
In an n-p-n common emitter (CE) transistor the collector current changes from 5‌mA to 16‌mA for the change in base current from 100µA and 200µA, respectively. The current gain of transistor is _______.
[12-Apr-2023 shift 1]
Q.51 Correct
Q.51 In-correct
Q.51 Unattempt
From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is 10x, for RB=10kΩ,RC=1kΩ. The value of x is ________

[13-Apr-2023 shift 1]
From the given transfer characteristic of a transistor in CE configuration, the value of power gain of this configuration is 10x, for RB=10kΩ,RC=1kΩ. The value of x is ________

[13-Apr-2023 shift 1]
Q.52 Correct
Q.52 In-correct
Q.52 Unattempt
The output from a NAND gate having inputs A and B given below will be,

[13-Apr-2023 shift 2]
The output from a NAND gate having inputs A and B given below will be,

[13-Apr-2023 shift 2]
Q.53 Correct
Q.53 In-correct
Q.53 Unattempt
A transistor is used in common-emitter mode in an amplifier circuit. When a signal of 10‌mV is added to the base-emitter voltage, the base current changes by 10µA and the collector current changes by 1.5‌mA. The load resistance is 5kΩ. The voltage gain of the transistor will be____
[24-Jun-2022-Shift-1]
A transistor is used in common-emitter mode in an amplifier circuit. When a signal of 10‌mV is added to the base-emitter voltage, the base current changes by 10µA and the collector current changes by 1.5‌mA. The load resistance is 5kΩ. The voltage gain of the transistor will be____
[24-Jun-2022-Shift-1]
Q.54 Correct
Q.54 In-correct
Q.54 Unattempt
In the given circuit, the value of current IL will be _____mA. (When RL=1kΩ )

[24-Jun-2022-Shift-2]
In the given circuit, the value of current IL will be _____mA. (When RL=1kΩ )

[24-Jun-2022-Shift-2]
Q.55 Correct
Q.55 In-correct
Q.55 Unattempt
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
[25-Jun-2022-Shift-1]
The photodiode is used to detect the optical signals. These diodes are preferably operated in reverse biased mode because :
[25-Jun-2022-Shift-1]
Q.56 Correct
Q.56 In-correct
Q.56 Unattempt
Identify the logic operation performed by the given circuit:

[25-Jun-2022-Shift-2]
Identify the logic operation performed by the given circuit:

[25-Jun-2022-Shift-2]
Q.57 Correct
Q.57 In-correct
Q.57 Unattempt
In an experiment of CE configuration of n−p−n transistor, the transfer characteristics are observed as given in figure.
If the input resistance is 200Ω and output resistance is 60Ω, the voltage gain in this experiment will be_____
[25-Jun-2022-Shift-2]
In an experiment of CE configuration of n−p−n transistor, the transfer characteristics are observed as given in figure.

If the input resistance is 200Ω and output resistance is 60Ω, the voltage gain in this experiment will be_____
[25-Jun-2022-Shift-2]
Q.58 Correct
Q.58 In-correct
Q.58 Unattempt
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2V and 4V respectively, is :

[26-Jun-2022-Shift-1]
The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2V and 4V respectively, is :

[26-Jun-2022-Shift-1]
Q.59 Correct
Q.59 In-correct
Q.59 Unattempt
As per the given circuit, the value of current through the battery will be____ A.

[26-Jun-2022-Shift-1]
As per the given circuit, the value of current through the battery will be____ A.

[26-Jun-2022-Shift-1]
Q.60 Correct
Q.60 In-correct
Q.60 Unattempt
The positive feedback is required by an amplifier to act an oscillator. The feedback here means :
[26-Jun-2022-Shift-2]
The positive feedback is required by an amplifier to act an oscillator. The feedback here means :
[26-Jun-2022-Shift-2]
Q.61 Correct
Q.61 In-correct
Q.61 Unattempt
Identify the correct Logic Gate for the following output (Y) of two inputs A and B.

[27-Jun-2022-Shift-1]
Identify the correct Logic Gate for the following output (Y) of two inputs A and B.

[27-Jun-2022-Shift-1]
Q.62 Correct
Q.62 In-correct
Q.62 Unattempt
For a transistor to act as a switch, it must be operated in
[27-Jun-2022-Shift-2]
For a transistor to act as a switch, it must be operated in
[27-Jun-2022-Shift-2]
Q.63 Correct
Q.63 In-correct
Q.63 Unattempt
The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6V. The current through the resister of 40Ω is_____ mA.

[27-Jun-2022-Shift-2]
The cut-off voltage of the diodes (shown in figure) in forward bias is 0.6V. The current through the resister of 40Ω is_____ mA.

[27-Jun-2022-Shift-2]
Q.64 Correct
Q.64 In-correct
Q.64 Unattempt
In the following circuit, the correct relation between output (Y) and inputs A and B will be :

[28-Jun-2022-Shift-1]
In the following circuit, the correct relation between output (Y) and inputs A and B will be :

[28-Jun-2022-Shift-1]
Q.65 Correct
Q.65 In-correct
Q.65 Unattempt
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :
[28-Jun-2022-Shift-1]
For using a multimeter to identify diode from electrical components, choose the correct statement out of the following about the diode :
[28-Jun-2022-Shift-1]
Q.66 Correct
Q.66 In-correct
Q.66 Unattempt
Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A : n-p-n transistor permits more current than a p-n-p transistor.
Reason R : Electrons have greater mobility as a charge carrier.
Choose the correct answer from the options given below :
[28-Jun-2022-Shift-1]
Given below are two statements : One is labelled as Assertion A and the other is labelled as Reason R.
Assertion A : n-p-n transistor permits more current than a p-n-p transistor.
Reason R : Electrons have greater mobility as a charge carrier.
Choose the correct answer from the options given below :
[28-Jun-2022-Shift-1]
Q.67 Correct
Q.67 In-correct
Q.67 Unattempt
In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p-n junction diode (D1. or .D2) is 0.6V. Which of the following output voltage (V0) waveform across the diode is correct?

[28-Jun-2022-Shift-2]
In the given circuit the input voltage Vin is shown in figure. The cut-in voltage of p-n junction diode (D1. or .D2) is 0.6V. Which of the following output voltage (V0) waveform across the diode is correct?

[28-Jun-2022-Shift-2]
Q.68 Correct
Q.68 In-correct
Q.68 Unattempt
A zener of breakdown voltage VZ=8V and maximum zener current, IZM=10‌mA is subject to an input voltage Vi=10V with series resistance R=100Ω. In the given circuit RL represents the variable load resistance. The ratio of maximum and minimum value of RL is_____

[28-Jun-2022-Shift-2]
A zener of breakdown voltage VZ=8V and maximum zener current, IZM=10‌mA is subjectd to an input voltage Vi=10V with series resistance R=100Ω. In the given circuit RL represents the variable load resistance. The ratio of maximum and minimum value of RL is_____

[28-Jun-2022-Shift-2]
Q.69 Correct
Q.69 In-correct
Q.69 Unattempt
A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100µA, it brings a change of 10‌mA in collector current. If the load resistance is 2kΩ and input resistance is 1kΩ, the value of power gain is x×104. The value of x is_____
[29-Jun-2022-Shift-1]
A transistor is used in an amplifier circuit in common emitter mode. If the base current changes by 100µA, it brings a change of 10‌mA in collector current. If the load resistance is 2kΩ and input resistance is 1kΩ, the value of power gain is x×104. The value of x is_____
[29-Jun-2022-Shift-1]
Q.70 Correct
Q.70 In-correct
Q.70 Unattempt
A potential barrier of 0.4V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0×105ms−1. The speed with which electron enters the p side will be ‌
x
3
×105ms−1 the value of x is____
(Given mass of electron =9×10−31‌kg, charge on electron =1.6×10−19C.)
[29-Jun-2022-Shift-2]
A potential barrier of 0.4V exists across a p-n junction. An electron enters the junction from the n-side with a speed of 6.0×105ms−1. The speed with which electron enters the p side will be ‌
x
3
×105ms−1 the value of x is____
(Given mass of electron =9×10−31‌kg, charge on electron =1.6×10−19C.)
[29-Jun-2022-Shift-2]
Q.71 Correct
Q.71 In-correct
Q.71 Unattempt
In the circuit, the logical value of A=1 or B=1 when potential at A or B is 5V and the logical value of A=0 or B=0 when potential at A or B is 0V.

The truth table of the given circuit will be :
[25-Jul-2022-Shift-1]
In the circuit, the logical value of A=1 or B=1 when potential at A or B is 5V and the logical value of A=0 or B=0 when potential at A or B is 0V.

The truth table of the given circuit will be :
[25-Jul-2022-Shift-1]
Q.72 Correct
Q.72 In-correct
Q.72 Unattempt
Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between A and B is ____Ω.

[25-Jul-2022-Shift-2]
Two ideal diodes are connected in the network as shown in figure. The equivalent resistance between A and B is ____Ω.

[25-Jul-2022-Shift-2]
Q.73 Correct
Q.73 In-correct
Q.73 Unattempt
In the circuit shown below, maximum zener diode current will be___ mA.

[26-Jul-2022-Shift-1]
In the circuit shown below, maximum zener diode current will be___ mA.

[26-Jul-2022-Shift-1]
Q.74 Correct
Q.74 In-correct
Q.74 Unattempt
The typical transfer characteristics of a transistor in CE configuration is shown in figure. A load resistor of 2kΩ is connected in the collector branch of the circuit used. The input resistance of the transistor is 0.50kΩ. The voltage gain of the transistor is ________.

[26-Jul-2022-Shift-2]
The typical transfer characteristics of a transistor in CE configuration is shown in figure. A load resistor of 2kΩ is connected in the collector branch of the circuit used. The input resistance of the transistor is 0.50kΩ. The voltage gain of the transistor is ________.

[26-Jul-2022-Shift-2]
Q.75 Correct
Q.75 In-correct
Q.75 Unattempt
A logic gate circuit has two inputs A and B and output Y. The voltage waveforms of A,B and Y are shown below.

The logic gate circuit is :
[27-Jul-2022-Shift-1]
A logic gate circuit has two inputs A and B and output Y. The voltage waveforms of A,B and Y are shown below.

The logic gate circuit is :
[27-Jul-2022-Shift-1]
Q.76 Correct
Q.76 In-correct
Q.76 Unattempt
For a constant collector-emitter voltage of 8V, the collector current of a transistor reached to the value of 6‌mA from 4‌mA, whereas base current changed from 20µA to 25µA value. If transistor is in active state, small signal current gain (current amplification factor) will be :
[27-Jul-2022-Shift-2]
For a constant collector-emitter voltage of 8V, the collector current of a transistor reached to the value of 6‌mA from 4‌mA, whereas base current changed from 20µA to 25µA value. If transistor is in active state, small signal current gain (current amplification factor) will be :
[27-Jul-2022-Shift-2]
Q.77 Correct
Q.77 In-correct
Q.77 Unattempt
Identify the solar cell characteristics from the following options :
[28-Jul-2022-Shift-1]
Identify the solar cell characteristics from the following options :
[28-Jul-2022-Shift-1]
Q.78 Correct
Q.78 In-correct
Q.78 Unattempt
An n.p.n transistor with current gain β=100 in common emitter configuration is shown in figure. The output voltage of the amplifier will be

[28-Jul-2022-Shift-2]
An n.p.n transistor with current gain β=100 in common emitter configuration is shown in figure. The output voltage of the amplifier will be

[28-Jul-2022-Shift-2]
Q.79 Correct
Q.79 In-correct
Q.79 Unattempt
If the potential barrier across a p-n junction is 0.6V. Then the electric field intensity, in the depletion region having the width of 6×10−6m, will be ________ ×105N∕C.
[29-Jul-2022-Shift-1]
If the potential barrier across a p-n junction is 0.6V. Then the electric field intensity, in the depletion region having the width of 6×10−6m, will be ________ ×105N∕C.
[29-Jul-2022-Shift-1]
Q.80 Correct
Q.80 In-correct
Q.80 Unattempt
A 8V Zener diode along with a series resistance R is connected across a 20V supply (as shown in the figure). If the maximum Zener current is 25‌mA, then the minimum value of R will be _______ Ω

[29-Jul-2022-Shift-2]
A 8V Zener diode along with a series resistance R is connected across a 20V supply (as shown in the figure). If the maximum Zener current is 25‌mA, then the minimum value of R will be _______ Ω

[29-Jul-2022-Shift-2]
Q.81 Correct
Q.81 In-correct
Q.81 Unattempt
If an emitter current is changed by 4mA, the collector current changes by 3.5mA. The value of β will be :
[24feb2021shift1]
If an emitter current is changed by 4mA, the collector current changes by 3.5mA. The value of β will be :
[24feb2021shift1]
Q.82 Correct
Q.82 In-correct
Q.82 Unattempt
In connection with the circuit drawn below, the value of current flowing through 2kΩ resistor is______ ×10−4A.

[24feb2021shift1]
In connection with the circuit drawn below, the value of current flowing through 2kΩ resistor is______ ×10−4A.

[24feb2021shift1]
Q.83 Correct
Q.83 In-correct
Q.83 Unattempt
The Zener diode has a V2=30V. The current passing through the diode for the following circuit is ......... mA.

[26 Feb 2021 Shift 2]
The Zener diode has a V2=30V. The current passing through the diode for the following circuit is ......... mA.

[26 Feb 2021 Shift 2]
Q.84 Correct
Q.84 In-correct
Q.84 Unattempt
LED is constructed from GaAsP semiconducting material. The energy gap of this LED is 1.9eV. Calculate the wavelength of light emitted and its colour.
[h=6.63×10−34Js and c=3×108ms−1 ]
[26 Feb 2021 Shift 1]
LED is constructed from GaAsP semiconducting material. The energy gap of this LED is 1.9eV. Calculate the wavelength of light emitted and its colour.
[h=6.63×10−34Js and c=3×108ms−1 ]
[26 Feb 2021 Shift 1]
Q.85 Correct
Q.85 In-correct
Q.85 Unattempt
The circuit contains two diodes each with a forward resistance of 50Ω and with infinite reverse resistance. If the battery voltage is 6V, the current through the 120Ω resistance is ......... mA.

[26 Feb 2021 Shift 1]
The circuit contains two diodes each with a forward resistance of 50Ω and with infinite reverse resistance. If the battery voltage is 6V, the current through the 120Ω resistance is ......... mA.

[26 Feb 2021 Shift 1]
Q.86 Correct
Q.86 In-correct
Q.86 Unattempt
For extrinsic semiconductors when doping level is increased,
[25 Feb 2021 Shift 2]
For extrinsic semiconductors when doping level is increased,
[25 Feb 2021 Shift 2]
Q.87 Correct
Q.87 In-correct
Q.87 Unattempt
A 5V battery is connected across the points X and Y. Assume D1 and D2 to be normal silicon diodes. Find the current supplied by the battery, if the positive terminal of the battery is connected to point X.

[25 Feb 2021 Shift 1]
A 5V battery is connected across the points X and Y. Assume D1 and D2 to be normal silicon diodes. Find the current supplied by the battery, if the positive terminal of the battery is connected to point X.

[25 Feb 2021 Shift 1]
Q.88 Correct
Q.88 In-correct
Q.88 Unattempt
Zener breakdown occurs in a p−n junction having p and n both
[24 Feb 2021 Shift 2]
Zener breakdown occurs in a p−n junction having p and n both
[24 Feb 2021 Shift 2]
Q.89 Correct
Q.89 In-correct
Q.89 Unattempt
Draw the output signal Y in the given combination of gates

[26 Feb 2021 Shift 2]
Draw the output signal Y in the given combination of gates

[26 Feb 2021 Shift 2]
Q.90 Correct
Q.90 In-correct
Q.90 Unattempt
The truth table for the following logic circuit is

[25 Feb 2021 Shift 2]
The truth table for the following logic circuit is

[25 Feb 2021 Shift 2]
Q.91 Correct
Q.91 In-correct
Q.91 Unattempt
The logic circuit shown above is equivalent to
[24 Feb 2021 Shift 2]

The logic circuit shown above is equivalent to
[24 Feb 2021 Shift 2]
Q.92 Correct
Q.92 In-correct
Q.92 Unattempt
The correct relation between α (ratio of collector current to emitter current) and β (ratio of collector current to base current) of a transistor is
[18 Mar 2021 Shift 2]
The correct relation between α (ratio of collector current to emitter current) and β (ratio of collector current to base current) of a transistor is
[18 Mar 2021 Shift 2]
Q.93 Correct
Q.93 In-correct
Q.93 Unattempt
Which one of the following will be the output of the given circuit?

[17 Mar 2021 Shift 2]
Which one of the following will be the output of the given circuit?

[17 Mar 2021 Shift 2]
Q.94 Correct
Q.94 In-correct
Q.94 Unattempt
An n−p−n transistor operates as a common emitter amplifier with a power gain of 106. The input circuit resistance is 100Ω and the output load resistance is 10kΩ. The common emitter current gain β will be ......... . (Round off to the nearest integer)
[18 Mar 2021 Shift 1]
An n−p−n transistor operates as a common emitter amplifier with a power gain of 106. The input circuit resistance is 100Ω and the output load resistance is 10kΩ. The common emitter current gain β will be ......... . (Round off to the nearest integer)
[18 Mar 2021 Shift 1]
Q.95 Correct
Q.95 In-correct
Q.95 Unattempt
The value of power dissipated across the Zener diode (Vz=15V) connected in the circuit as shown in the figure is x×10−1W.
The value of x, to the nearest integer, is .........
[16 Mar 2021 Shift 1]
The value of power dissipated across the Zener diode (Vz=15V) connected in the circuit as shown in the figure is x×10−1W.

The value of x, to the nearest integer, is .........
[16 Mar 2021 Shift 1]
Q.96 Correct
Q.96 In-correct
Q.96 Unattempt
In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively, the output at Y would be x. The value of x is ...... .

[16 Mar 2021 Shift 1]
In the logic circuit shown in the figure, if input A and B are 0 to 1 respectively, the output at Y would be x. The value of x is ...... .

[16 Mar 2021 Shift 1]
Q.97 Correct
Q.97 In-correct
Q.97 Unattempt
The following logic gate is equivalent to

[16 Mar 2021 Shift 2]
The following logic gate is equivalent to

[16 Mar 2021 Shift 2]
Q.98 Correct
Q.98 In-correct
Q.98 Unattempt
In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1.5×1016∕m3. If the semiconductor is doped with impurity atom, the hole density increases to 4.5×1022∕m3. The electron density in the doped semiconductor is_______ ×109∕m3
[25 Jul 2021 Shift 2]
In a semiconductor, the number density of intrinsic charge carriers at 27°C is 1.5×1016∕m3. If the semiconductor is doped with impurity atom, the hole density increases to 4.5×1022∕m3. The electron density in the doped semiconductor is_______ ×109∕m3
[25 Jul 2021 Shift 2]
Q.99 Correct
Q.99 In-correct
Q.99 Unattempt
In a given circuit diagram, a 5V zener diode along with a series resistance is connected across a 50V power supply. The minimum value of the resistance required, if the maximum zener current is 90mA will be _____ Ω.

[22 Jul 2021 Shift 2]
In a given circuit diagram, a 5V zener diode along with a series resistance is connected across a 50V power supply. The minimum value of the resistance required, if the maximum zener current is 90mA will be _____ Ω.

[22 Jul 2021 Shift 2]
Q.100 Correct
Q.100 In-correct
Q.100 Unattempt
Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength ≤ 621 nm.
During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
[22 Jul 2021 Shift 2]
Consider a situation in which reverse biased current of a particular P-N junction increases when it is exposed to a light of wavelength ≤ 621 nm.
During this process, enhancement in carrier concentration takes place due to generation of hole-electron pairs. The value of band gap is nearly.
[22 Jul 2021 Shift 2]
Q.101 Correct
Q.101 In-correct
Q.101 Unattempt
A zener diode having zener voltage 8V and power dissipation rating of 0.5W is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of protective resistance Rp is ........Ω.

[20 Jul 2021 Shift 2]
A zener diode having zener voltage 8V and power dissipation rating of 0.5W is connected across a potential divider arranged with maximum potential drop across zener diode is as shown in the diagram. The value of protective resistance Rp is ........Ω.

[20 Jul 2021 Shift 2]
Q.102 Correct
Q.102 In-correct
Q.102 Unattempt
For the forward biased diode characteristics shown in the figure, the dynamic resistance at ID=3mAwill be _______Ω.

[20 Jul 2021 Shift 2]
For the forward biased diode characteristics shown in the figure, the dynamic resistance at ID=3mAwill be _______Ω.

[20 Jul 2021 Shift 2]
Q.103 Correct
Q.103 In-correct
Q.103 Unattempt
For the circuit shown below, calculate the value of Iz:

[20 Jul 2021 Shift 1]
For the circuit shown below, calculate the value of Iz:

[20 Jul 2021 Shift 1]
Q.104 Correct
Q.104 In-correct
Q.104 Unattempt
Find the truth table for the function Y of A and B represented in the following figure.

[27 Jul 2021 Shift 2]
Find the truth table for the function Y of A and B represented in the following figure.

[27 Jul 2021 Shift 2]
Q.105 Correct
Q.105 In-correct
Q.105 Unattempt
Choose the correct wave form that can represent the voltage across R of the following circuit, assuming the diode is ideal one.

[31 Aug 2021 Shift 1]
Choose the correct wave form that can represent the voltage across R of the following circuit, assuming the diode is ideal one.

[31 Aug 2021 Shift 1]
Q.106 Correct
Q.106 In-correct
Q.106 Unattempt
Statement I To get a steady DC output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load RL.
Statement II To get a steady DC output from the pulsating voltage received from a full wave rectifier we can connect an inductor in series with RL.
In the light of the above statements, choose the most appropriate answer from the options given below.
[31 Aug 2021 Shift 2]
Statement I To get a steady DC output from the pulsating voltage received from a full wave rectifier we can connect a capacitor across the output parallel to the load RL.
Statement II To get a steady DC output from the pulsating voltage received from a full wave rectifier we can connect an inductor in series with RL.
In the light of the above statements, choose the most appropriate answer from the options given below.
[31 Aug 2021 Shift 2]
Q.107 Correct
Q.107 In-correct
Q.107 Unattempt
A Zener diode of power rating 2W is to be used as a voltage regulator. If the Zener diode has a breakdown of 10V and it has to regulate voltage fluctuated between 6V and 14V, the value of RS for safe operation should be........ Ω

[27 Aug 2021 Shift 2]
A Zener diode of power rating 2W is to be used as a voltage regulator. If the Zener diode has a breakdown of 10V and it has to regulate voltage fluctuated between 6V and 14V, the value of RS for safe operation should be........ Ω

[27 Aug 2021 Shift 2]
Q.108 Correct
Q.108 In-correct
Q.108 Unattempt
For the given circuit, the power across Zener diode is ......... mW.

[26 Aug 2021 Shift 2]
For the given circuit, the power across Zener diode is ......... mW.

[26 Aug 2021 Shift 2]
Q.109 Correct
Q.109 In-correct
Q.109 Unattempt
Statement I By doping silicon semiconductor with pentavalent material, the electrons density increases.
Statement II The n -type semiconductor has net negative charge.
In the light of the above statements, choose the most appropriate answer from the options given below.
[26 Aug 2021 Shift 1]
Statement I By doping silicon semiconductor with pentavalent material, the electrons density increases.
Statement II The n -type semiconductor has net negative charge.
In the light of the above statements, choose the most appropriate answer from the options given below.
[26 Aug 2021 Shift 1]
Q.110 Correct
Q.110 In-correct
Q.110 Unattempt
If VA and VB are the input voltages (either 5V or OV) and V0 is the output voltage then the two gates represented in the following circuit (A) and (B) are

[31 Aug 2021 Shift 2]
If VA and VB are the input voltages (either 5V or OV) and V0 is the output voltage then the two gates represented in the following circuit (A) and (B) are

[31 Aug 2021 Shift 2]
Q.111 Correct
Q.111 In-correct
Q.111 Unattempt
Four NOR gates are connected as shown in figure.
The truth table for the given figure is

[26 Aug 2021 Shift 2]
Four NOR gates are connected as shown in figure.
The truth table for the given figure is

[26 Aug 2021 Shift 2]
Q.112 Correct
Q.112 In-correct
Q.112 Unattempt
A circuit is arranged as shown in figure. The output voltage V0 is equal to ......... V.

[27 Aug 2021 Shift 1]
A circuit is arranged as shown in figure. The output voltage V0 is equal to ......... V.

[27 Aug 2021 Shift 1]
Q.113 Correct
Q.113 In-correct
Q.113 Unattempt
Identify the logic operation carried out by the given circuit.

[26 Aug 2021 Shift 1]
Identify the logic operation carried out by the given circuit.

[26 Aug 2021 Shift 1]
Q.114 Correct
Q.114 In-correct
Q.114 Unattempt
For a transistor α and β are given as α=
IC
IE
 and β=
IC
IB
. Then, the correct relation between α and β will be
[27 Aug 2021 Shift 2]
For a transistor α and β are given as α=
IC
IE
 and β=
IC
IB
. Then, the correct relation between α and β will be
[27 Aug 2021 Shift 2]
Q.115 Correct
Q.115 In-correct
Q.115 Unattempt
Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. Built in potential in each diode is 0.7 V. For the input voltages shown in the figure, the voltage (in Volts) at point A is ________.

[NA 9 Jan. 2020 I]
Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. Built in potential in each diode is 0.7 V. For the input voltages shown in the figure, the voltage (in Volts) at point A is ________.

[NA 9 Jan. 2020 I]
Q.116 Correct
Q.116 In-correct
Q.116 Unattempt
The current i in the network is:

[9 Jan. 2020 II]
The current i in the network is:

[9 Jan. 2020 II]
Q.117 Correct
Q.117 In-correct
Q.117 Unattempt
Two identical capacitors A and B, charged to the same potential 5V are connected in two different circuits as shown below at time t=0. If the charge on capacitors A and B at time t=CR is QA and QB respectively, then (Here e is the base of natural logarithm)

[9 Jan. 2020 II]
Two identical capacitors A and B, charged to the same potential 5V are connected in two different circuits as shown below at time t=0. If the charge on capacitors A and B at time t=CR is QA and QB respectively, then (Here e is the base of natural logarithm)

[9 Jan. 2020 II]
Q.118 Correct
Q.118 In-correct
Q.118 Unattempt
The circuit shown below is working as a 8 V dc regulated voltage source. When 12 V is used as input, the power dissipated (in mW) in each diode is; (considering both zener diodes are identical) _____.

[NA 9 Jan. 2020 II]
The circuit shown below is working as a 8 V dc regulated voltage source. When 12 V is used as input, the power dissipated (in mW) in each diode is; (considering both zener diodes are identical) _____.

[NA 9 Jan. 2020 II]
Q.119 Correct
Q.119 In-correct
Q.119 Unattempt
In the figure, potential difference between A and B is:

[7 Jan. 2020 II]
In the figure, potential difference between A and B is:

[7 Jan. 2020 II]
Q.120 Correct
Q.120 In-correct
Q.120 Unattempt
Boolean relation at the output stage-Y for the following circuit is:

[8 Jan. 2020 I]
Boolean relation at the output stage-Y for the following circuit is:

[8 Jan. 2020 I]
Q.121 Correct
Q.121 In-correct
Q.121 Unattempt
In the given circuit, value of Y is:

[8 Jan. 2020 II]
In the given circuit, value of Y is:

[8 Jan. 2020 II]
Q.122 Correct
Q.122 In-correct
Q.122 Unattempt
Which of the following gives a reversible operation?
[7 Jan. 2020 I]
Which of the following gives a reversible operation?
[7 Jan. 2020 I]
Q.123 Correct
Q.123 In-correct
Q.123 Unattempt
With increasing biasing voltage of a photodiode, the photocurrent magnitude :
[Sep. 05, 2020 (I)]
With increasing biasing voltage of a photodiode, the photocurrent magnitude :
[Sep. 05, 2020 (I)]
Q.124 Correct
Q.124 In-correct
Q.124 Unattempt
Two Zener diodes (A and B) having breakdown voltages of 6V and 4V respectively, are connected as shown in the circuit below. The output voltage V0 variation with input voltage linearly increasing with time, is given by:
(Vinput =0V at t=0)
(figures are qualitative)

[Sep. 05,2020 (II)]
Two Zener diodes (A and B) having breakdown voltages of 6V and 4V respectively, are connected as shown in the circuit below. The output voltage V0 variation with input voltage linearly increasing with time, is given by:
(Vinput =0V at t=0)
(figures are qualitative)

[Sep. 05,2020 (II)]
Q.125 Correct
Q.125 In-correct
Q.125 Unattempt
Take the breakdown voltage of the zener diode used in the given circuit as 6V. For the input voltage shown in figure below, the time variation of the output voltage is :
(Graphs drawn are schematic and not to scale)

[Sep. 04,2020 (I)]
Take the breakdown voltage of the zener diode used in the given circuit as 6V. For the input voltage shown in figure below, the time variation of the output voltage is :
(Graphs drawn are schematic and not to scale)

[Sep. 04,2020 (I)]
Q.126 Correct
Q.126 In-correct
Q.126 Unattempt
When a diode is forward biased, it has a voltage drop of 0.5V. The safe limit of current through the diode is 10mA If a battery of emf 1.5V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is :
[Sep. 03,2020 (I)]
When a diode is forward biased, it has a voltage drop of 0.5V. The safe limit of current through the diode is 10mA If a battery of emf 1.5V is used in the circuit, the value of minimum resistance to be connected in series with the diode so that the current does not exceed the safe limit is :
[Sep. 03,2020 (I)]
Q.127 Correct
Q.127 In-correct
Q.127 Unattempt
If a semiconductor photodiode can detect a photon with a maximum wavelength of 400 nm, then its band gap energy is: Planck's constant, h=6.63×10−34J.s
Speed of light, c=3×108m∕s
[Sep. 03,2020 (II)]
If a semiconductor photodiode can detect a photon with a maximum wavelength of 400 nm, then its band gap energy is: Planck's constant, h=6.63×10−34J.s
Speed of light, c=3×108m∕s
[Sep. 03,2020 (II)]
Q.128 Correct
Q.128 In-correct
Q.128 Unattempt
The output characteristics of a transistor is shown in the figure. When VCE is 10V and IC=4.0mA, then value of βac is _______.

[NA Sep. 06,2020 (II)]
The output characteristics of a transistor is shown in the figure. When VCE is 10V and IC=4.0mA, then value of βac is _______.

[NA Sep. 06,2020 (II)]
Q.129 Correct
Q.129 In-correct
Q.129 Unattempt
Identify the correct output signal Y in the given combination of gates (as shown) for the given inputs A and B.

[Sep. 06, 2020 (I)]
Identify the correct output signal Y in the given combination of gates (as shown) for the given inputs A and B.

[Sep. 06, 2020 (I)]
Q.130 Correct
Q.130 In-correct
Q.130 Unattempt
Identify the operation performed by the circuit given below:

[Sep. 04, 2020 (II)]
Identify the operation performed by the circuit given below:

[Sep. 04, 2020 (II)]
Q.131 Correct
Q.131 In-correct
Q.131 Unattempt
In the following digital circuit, what will be the output at ‘Z’, when the input (A, B) are (1, 0), (0, 0), (1, 1), (0, 1) :

[Sep. 02, 2020 (II)]
In the following digital circuit, what will be the output at ‘Z’, when the input (A, B) are (1, 0), (0, 0), (1, 1), (0, 1) :

[Sep. 02, 2020 (II)]
Q.132 Correct
Q.132 In-correct
Q.132 Unattempt
In the figure, given that VBB supply can vary from 0 to 5.0 V,VCC=5V,βdc=200,RB=100kΩ,RC=1KΩ and VBE=1.0V. The minimum base current and the input voltage at which the transistor will go to saturation, will be, respectively:
[12 Jan. 2019 II]

In the figure, given that VBB supply can vary from 0 to 5.0 V,VCC=5V,βdc=200,RB=100kΩ,RC=1KΩ and VBE=1.0V. The minimum base current and the input voltage at which the transistor will go to saturation, will be, respectively:
[12 Jan. 2019 II]
Q.133 Correct
Q.133 In-correct
Q.133 Unattempt
In the given circuit the current through Zener Diode is close to :

[11 Jan. 2019 I]
In the given circuit the current through Zener Diode is close to :

[11 Jan. 2019 I]
Q.134 Correct
Q.134 In-correct
Q.134 Unattempt
The circuit shown below contains two ideal diodes, each with a forward resistance of 50 Ω. If the battery voltage is 6V, the current through the 100 Ω resistance (in Amperes) is :

[11 Jan. 2019 II]
The circuit shown below contains two ideal diodes, each with a forward resistance of 50 Ω. If the battery voltage is 6V, the current through the 100 Ω resistance (in Amperes) is :

[11 Jan. 2019 II]
Q.135 Correct
Q.135 In-correct
Q.135 Unattempt
For the circuit shown below, the current through the Zener diode is:

[10 Jan. 2019 II]
For the circuit shown below, the current through the Zener diode is:

[10 Jan. 2019 II]
Q.136 Correct
Q.136 In-correct
Q.136 Unattempt
Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 1019m–3 and their mobility is 1.6m‌2/(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to:
[9 Jan. 2019 I]
Mobility of electrons in a semiconductor is defined as the ratio of their drift velocity to the applied electric field. If, for an n-type semiconductor, the density of electrons is 1019m–3 and their mobility is 1.6m‌2/(V.s) then the resistivity of the semiconductor (since it is an n-type semiconductor contribution of holes is ignored) is close to:
[9 Jan. 2019 I]
Q.137 Correct
Q.137 In-correct
Q.137 Unattempt
Ge and Si diodes start conducting at 0.3V and 0.7V respectively. In the following figure if Ge diode connection are reversed, the value of V0 changes by :
(assume that the Ge diode has large breakdown voltage)

[9 Jan. 2019 II]
Ge and Si diodes start conducting at 0.3V and 0.7V respectively. In the following figure if Ge diode connection are reversed, the value of V0 changes by :
(assume that the Ge diode has large breakdown voltage)

[9 Jan. 2019 II]
Q.138 Correct
Q.138 In-correct
Q.138 Unattempt
The output of the given logic circuit is:

[12 Jan. 2019 I]
The output of the given logic circuit is:

[12 Jan. 2019 I]
Q.139 Correct
Q.139 In-correct
Q.139 Unattempt
To get output ‘1’ at R, for the given logic gate circuit the input values must be:

[10 Jan. 2019 I]
To get output ‘1’ at R, for the given logic gate circuit the input values must be:

[10 Jan. 2019 I]
Q.140 Correct
Q.140 In-correct
Q.140 Unattempt
Figure shows a DC voltage regulator circuit, with a Zener diode of breakdown voltage = 6V. If the unregulated input voltage varies between 10 V to 16 V, then what is the maximum Zener current ?

[12 Apr. 2019 II]
Figure shows a DC voltage regulator circuit, with a Zener diode of breakdown voltage = 6V. If the unregulated input voltage varies between 10 V to 16 V, then what is the maximum Zener current ?

[12 Apr. 2019 II]
Q.141 Correct
Q.141 In-correct
Q.141 Unattempt
The figure represents a voltage regulator circuit using a Zener diode. The breakdown voltage of the Zener diode is 6V and the load resistance is Rt=4k. The series resistance of the circuit is Ri=1k. If the battery voltage VB varies from 8V to 16V, what are the minimum and maximum values of the current through Zener diode?

[10 Apr. 2019 II]
The figure represents a voltage regulator circuit using a Zener diode. The breakdown voltage of the Zener diode is 6V and the load resistance is Rt=4k. The series resistance of the circuit is Ri=1k. If the battery voltage VB varies from 8V to 16V, what are the minimum and maximum values of the current through Zener diode?

[10 Apr. 2019 II]
Q.142 Correct
Q.142 In-correct
Q.142 Unattempt
The reverse breakdown voltage of a Zener diode is 5.6 V in the given circuit
The current Iz through the Zener is :
[8 April 2019 I]
The reverse breakdown voltage of a Zener diode is 5.6 V in the given circuit

The current Iz through the Zener is :
[8 April 2019 I]
Q.143 Correct
Q.143 In-correct
Q.143 Unattempt
The transfer characteristic curve of a transistor, having input and output resistance 100 Ω and 100 k Ω respectively, is shown in the figure. The Voltage and Power gain, are respectively :

[12 Apr. 2019 I]
The transfer characteristic curve of a transistor, having input and output resistance 100 Ω and 100 k Ω respectively, is shown in the figure. The Voltage and Power gain, are respectively :

[12 Apr. 2019 I]
Q.144 Correct
Q.144 In-correct
Q.144 Unattempt
An npn transistor operates as a common emitter amplifier, with a power gain of 60dB. The input circuit resistance is 100Ω and the output load resistance is 10kΩ. The common emitter current gain β is :
[10 Apr. 2019 I]
An npn transistor operates as a common emitter amplifier, with a power gain of 60dB. The input circuit resistance is 100Ω and the output load resistance is 10kΩ. The common emitter current gain β is :
[10 Apr. 2019 I]
Q.145 Correct
Q.145 In-correct
Q.145 Unattempt
An NPN transistor is used in common emitterconfiguration as an amplifier with 1 k &! load resistance. Signal voltage of 10mV is applied across the base-emitter. This produces a 3mA change in the collector current and 15
1
4
A change in the base current of the amplifier. The input resistance and voltage gain are:
[9 Apr. 2019 I]
An NPN transistor is used in common emitterconfiguration as an amplifier with 1 k &! load resistance. Signal voltage of 10mV is applied across the base-emitter. This produces a 3mA change in the collector current and 15
1
4
A change in the base current of the amplifier. The input resistance and voltage gain are:
[9 Apr. 2019 I]
Q.146 Correct
Q.146 In-correct
Q.146 Unattempt
A common emitter amplifier circuit, built using an npn transistor, is shown in the figure. Its dc current gain is 250 , RC=1 k & ! and VCC=10V. What is the minimum base current for VCE to reach saturation?

[8 Apr.2019 II]
A common emitter amplifier circuit, built using an npn transistor, is shown in the figure. Its dc current gain is 250 , RC=1 k & ! and VCC=10V. What is the minimum base current for VCE to reach saturation?

[8 Apr.2019 II]
Q.147 Correct
Q.147 In-correct
Q.147 Unattempt
The truth table for the circuit given in the fig. is :

[9 April 2019 I]
The truth table for the circuit given in the fig. is :

[9 April 2019 I]
Q.148 Correct
Q.148 In-correct
Q.148 Unattempt
The logic gate equivalent to the given logic circuit is:

[9 Apr. 2019 II]
The logic gate equivalent to the given logic circuit is:

[9 Apr. 2019 II]
Q.149 Correct
Q.149 In-correct
Q.149 Unattempt
The reading of the ammeter for a silicon diode in the given circuit is :

[2018]
The reading of the ammeter for a silicon diode in the given circuit is :

[2018]
Q.150 Correct
Q.150 In-correct
Q.150 Unattempt
In the given circuit, the current through zener diode is:

[Online April 16, 2018]
In the given circuit, the current through zener diode is:

[Online April 16, 2018]
Q.151 Correct
Q.151 In-correct
Q.151 Unattempt
In a common emitter configuration with suitable bias, it is given than RL is the load resistance and RBE is small signal dynamic resistance (input side). Then, voltage gain, current gain and power gain are given, respectively, by:
(β is current gain, IB,IC,IE are respectively base, collector and emitter currents:)
[Online April 15,2018]
In a common emitter configuration with suitable bias, it is given than RL is the load resistance and RBE is small signal dynamic resistance (input side). Then, voltage gain, current gain and power gain are given, respectively, by:
(β is current gain, IB,IC,IE are respectively base, collector and emitter currents:)
[Online April 15,2018]
Q.152 Correct
Q.152 In-correct
Q.152 Unattempt
Truth table for the given circuit will be

[Online April 15, 2018]
Truth table for the given circuit will be

[Online April 15, 2018]
Q.153 Correct
Q.153 In-correct
Q.153 Unattempt
What is the conductivity of a semiconductor sample having electron concentration of 5×1018m−3, hole concentration of 5×1019m−3, electron mobility of 2.0m2V−1s−1 and hole mobility of 0.01m2V−1s−1 ?
(Take charge of electron as 1.6×10−19C)
[Online April 8, 2017]
What is the conductivity of a semiconductor sample having electron concentration of 5×1018m−3, hole concentration of 5×1019m−3, electron mobility of 2.0m2V−1s−1 and hole mobility of 0.01m2V−1s−1 ?
(Take charge of electron as 1.6×10−19C)
[Online April 8, 2017]
Q.154 Correct
Q.154 In-correct
Q.154 Unattempt
The V–I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is :

[Online April 8, 2017]
The V–I characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is :

[Online April 8, 2017]
Q.155 Correct
Q.155 In-correct
Q.155 Unattempt
The current gain of a common emitter amplifier is 69. If theemitter current is 7.0 mA, collector current is :
[Online April 9, 2017]
The current gain of a common emitter amplifier is 69. If theemitter current is 7.0 mA, collector current is :
[Online April 9, 2017]
Q.156 Correct
Q.156 In-correct
Q.156 Unattempt
In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be :
[Online April 2, 2017]
In a common emitter amplifier circuit using an n-p-n transistor, the phase difference between the input and the output voltages will be :
[Online April 2, 2017]
Q.157 Correct
Q.157 In-correct
Q.157 Unattempt
Identify the semiconductor devices whose characteristics are given below, in the order (i), (ii), (iii), (iv) :

[2016]
Identify the semiconductor devices whose characteristics are given below, in the order (i), (ii), (iii), (iv) :

[2016]
Q.158 Correct
Q.158 In-correct
Q.158 Unattempt
The temperature dependence of resistances of Cu and undoped Si in the temperature range 300-400 K, is best described by :
[2016]
The temperature dependence of resistances of Cu and undoped Si in the temperature range 300-400 K, is best described by :
[2016]
Q.159 Correct
Q.159 In-correct
Q.159 Unattempt
An experiment is performed to determine the 1–V characteristics of a Zener diode, which has a protective resistance of R = 100 Ω, and a maximum power of dissipation rating of 1W. The minimum voltage range of the DC source in the circuit is :
[Online April 9, 2016]
An experiment is performed to determine the 1–V characteristics of a Zener diode, which has a protective resistance of R = 100 Ω, and a maximum power of dissipation rating of 1W. The minimum voltage range of the DC source in the circuit is :
[Online April 9, 2016]
Q.160 Correct
Q.160 In-correct
Q.160 Unattempt
For a common emitter configuration, if α and β have their usual meanings, the incorrect relationship between α and β is:
[2016]
For a common emitter configuration, if α and β have their usual meanings, the incorrect relationship between α and β is:
[2016]
Q.161 Correct
Q.161 In-correct
Q.161 Unattempt
A realistic graph depicting the variation of the reciprocal of input resistance in an input characteristics measurement in a common emitter transistor configuration is :
[Online April 10, 2016]
A realistic graph depicting the variation of the reciprocal of input resistance in an input characteristics measurement in a common emitter transistor configuration is :
[Online April 10, 2016]
Q.162 Correct
Q.162 In-correct
Q.162 Unattempt
The ratio (R) of output resistance r0, and the input resistance ri in measurements of input and output characteristics of a transistor is typically in the range :
[Online April 10,2016]
The ratio (R) of output resistance r0, and the input resistance ri in measurements of input and output characteristics of a transistor is typically in the range :
[Online April 10,2016]
Q.163 Correct
Q.163 In-correct
Q.163 Unattempt
An unknown transistor needs to be identified as a npn or pnp type. A multimeter, with +ve and –ve terminals, is used to measure resistance between different terminals of transistor. If terminal 2 is the base of the transistor then which of the following is correct for a pnp transistor?
[Online April 9,2016]
An unknown transistor needs to be identified as a npn or pnp type. A multimeter, with +ve and –ve terminals, is used to measure resistance between different terminals of transistor. If terminal 2 is the base of the transistor then which of the following is correct for a pnp transistor?
[Online April 9,2016]
Q.164 Correct
Q.164 In-correct
Q.164 Unattempt
If a, b, c, d are inputs to a gate and x is its output, then, as per the following time graph, the gate is :

[2016]
If a, b, c, d are inputs to a gate and x is its output, then, as per the following time graph, the gate is :

[2016]
Q.165 Correct
Q.165 In-correct
Q.165 Unattempt
To get an output of 1 from the circuit shown in figure the input must be :

[Online April 10, 2016]
To get an output of 1 from the circuit shown in figure the input must be :

[Online April 10, 2016]
Q.166 Correct
Q.166 In-correct
Q.166 Unattempt
The truth table given in fig. represents :

[Online April 9, 2016]
The truth table given in fig. represents :

[Online April 9, 2016]
Q.167 Correct
Q.167 In-correct
Q.167 Unattempt
A red LED emits light at 0.1 watt uniformly around it. The amplitude of the electric field of the light at a distance of 1 m from the diode is :
[2015]
A red LED emits light at 0.1 watt uniformly around it. The amplitude of the electric field of the light at a distance of 1 m from the diode is :
[2015]
Q.168 Correct
Q.168 In-correct
Q.168 Unattempt
A 2V battery is connected across AB as shown in the figure. The value of the current supplied by the battery when in one case battery’s positive terminal is connected to A and in other case when positive terminal of battery is connected to B will respectively be:

[Online April 11, 2015]
A 2V battery is connected across AB as shown in the figure. The value of the current supplied by the battery when in one case battery’s positive terminal is connected to A and in other case when positive terminal of battery is connected to B will respectively be:

[Online April 11, 2015]
Q.169 Correct
Q.169 In-correct
Q.169 Unattempt
In an unbiased n-p junction electrons diffuse from n-region to p-region because :
[Online April 10, 2015]
In an unbiased n-p junction electrons diffuse from n-region to p-region because :
[Online April 10, 2015]
Q.170 Correct
Q.170 In-correct
Q.170 Unattempt
The forward biased diode connection is:
[2014]
The forward biased diode connection is:
[2014]
Q.171 Correct
Q.171 In-correct
Q.171 Unattempt
For LED’s to emit light in visible region of electromagnetic light, it should have energy band gap in the range of:
[Online April 12, 2014]
For LED’s to emit light in visible region of electromagnetic light, it should have energy band gap in the range of:
[Online April 12, 2014]
Q.172 Correct
Q.172 In-correct
Q.172 Unattempt
A Zener diode is connected to a battery and a load as show below:

The currents, I, IZ and IL are respectively.
[Online April 11, 2014]
A Zener diode is connected to a battery and a load as show below:

The currents, I, IZ and IL are respectively.
[Online April 11, 2014]
Q.173 Correct
Q.173 In-correct
Q.173 Unattempt
An n-p-n transistor has three leads A, B and C. Connecting B and C by moist fingers, A to the positive lead of an ammeter, and C to the negative lead of the ammeter, one finds large deflection. Then, A, B and C refer respectively to:
[Online April 9,2014]
An n-p-n transistor has three leads A, B and C. Connecting B and C by moist fingers, A to the positive lead of an ammeter, and C to the negative lead of the ammeter, one finds large deflection. Then, A, B and C refer respectively to:
[Online April 9,2014]
Q.174 Correct
Q.174 In-correct
Q.174 Unattempt
Given: A and B are input terminals.
Logic 1 = > 5 V
Logic 0 = < 1 V
Which logic gate operation, the above circuit does?
[Online April 19, 2014]

Given: A and B are input terminals.
Logic 1 = > 5 V
Logic 0 = < 1 V
Which logic gate operation, the above circuit does?
[Online April 19, 2014]
Q.175 Correct
Q.175 In-correct
Q.175 Unattempt
Identify the gate and match A, B, Y in bracket to check.

[Online April 9, 2014]
Identify the gate and match A, B, Y in bracket to check.

[Online April 9, 2014]
Q.176 Correct
Q.176 In-correct
Q.176 Unattempt
Which of the following circuits correctly represents the following truth table ?


[Online April 25, 2014]
Which of the following circuits correctly represents the following truth table ?

[Online April 25, 2014]
Q.177 Correct
Q.177 In-correct
Q.177 Unattempt
The I-V characteristic of an LED is
[2013]
The I-V characteristic of an LED is
[2013]
Q.178 Correct
Q.178 In-correct
Q.178 Unattempt
Figure shows a circuit in which three identical diodes are used. Each diode has forward resistance of 20‌Omega and infinite backward resistance. Resistors R1=R2=R3=50Ω. Battery voltage is 6V. The current through R3 is :

[Online April 22, 2013]
Figure shows a circuit in which three identical diodes are used. Each diode has forward resistance of 20‌Omega and infinite backward resistance. Resistors R1=R2=R3=50Ω. Battery voltage is 6V. The current through R3 is :

[Online April 22, 2013]
Q.179 Correct
Q.179 In-correct
Q.179 Unattempt
A system of four gates is set up as shown. The ‘truth table’ corresponding to this system is :

[Online April 23, 2013]
A system of four gates is set up as shown. The ‘truth table’ corresponding to this system is :

[Online April 23, 2013]
Q.180 Correct
Q.180 In-correct
Q.180 Unattempt
Consider two npn transistors as shown in figure. If 0 Volts corresponds to false and 5 Volts correspond to true then the output at C corresponds to :

[Online April 9, 2013]
Consider two npn transistors as shown in figure. If 0 Volts corresponds to false and 5 Volts correspond to true then the output at C corresponds to :

[Online April 9, 2013]
Q.181 Correct
Q.181 In-correct
Q.181 Unattempt
Which logic gate with inputs A and B performs the same operation as that performed by the following circuit?

[Online May 7, 2012]
Which logic gate with inputs A and B performs the same operation as that performed by the following circuit?

[Online May 7, 2012]
Q.182 Correct
Q.182 In-correct
Q.182 Unattempt
This question has Statement 1 and Statement 2. Of the four choices given after the Statements, choose the one that best describes the two Statements.
Statement 1: A pure semiconductor has negative temperature coefficient of resistance.
Statement 2: On raising the temperature, more charge carriers are released into the conduction band.
[Online May 12, 2012]
This question has Statement 1 and Statement 2. Of the four choices given after the Statements, choose the one that best describes the two Statements.
Statement 1: A pure semiconductor has negative temperature coefficient of resistance.
Statement 2: On raising the temperature, more charge carriers are released into the conduction band.
[Online May 12, 2012]
Q.183 Correct
Q.183 In-correct
Q.183 Unattempt
Truth table for system of four NAND gates as shown in figure is :

[2012]
Truth table for system of four NAND gates as shown in figure is :

[2012]
Q.184 Correct
Q.184 In-correct
Q.184 Unattempt
The figure shows a combination of two NOT gates and a NOR gate.

The combination is equivalent to a
[Online May 26, 2012]
The figure shows a combination of two NOT gates and a NOR gate.

The combination is equivalent to a
[Online May 26, 2012]
Q.185 Correct
Q.185 In-correct
Q.185 Unattempt
Which one of the following is the Boolean expression for NOR gate?
[Online May 19, 2012]
Which one of the following is the Boolean expression for NOR gate?
[Online May 19, 2012]
Q.186 Correct
Q.186 In-correct
Q.186 Unattempt
The output of an OR gate is connected to both the inputs of a NAND gate. The combination will serve as a:
[2011 RS]
The output of an OR gate is connected to both the inputs of a NAND gate. The combination will serve as a:
[2011 RS]
Q.187 Correct
Q.187 In-correct
Q.187 Unattempt
The combination of gates shown below yields

[2010]
The combination of gates shown below yields

[2010]
Q.188 Correct
Q.188 In-correct
Q.188 Unattempt
A p-n junction (D) shown in the figure can act as a rectifier.
An alternating current source (V) is connected in the circuit.

The current (I) in the resistor (R) can be shown by :
[2009]
A p-n junction (D) shown in the figure can act as a rectifier.
An alternating current source (V) is connected in the circuit.

The current (I) in the resistor (R) can be shown by :
[2009]
Q.189 Correct
Q.189 In-correct
Q.189 Unattempt
The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as shown. Pick out the correct output waveform.

Output is
[2009]
The logic circuit shown below has the input waveforms ‘A’ and ‘B’ as shown. Pick out the correct output waveform.

Output is
[2009]
Q.190 Correct
Q.190 In-correct
Q.190 Unattempt
A working transistor with its three legs marked P, Q and R is tested using a multimeter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or Q, some resistance is seen on the multimeter. Which of the following is true for the transistor?
[2008]
A working transistor with its three legs marked P, Q and R is tested using a multimeter. No conduction is found between P and Q. By connecting the common (negative) terminal of the multimeter to R and the other (positive) terminal to P or Q, some resistance is seen on the multimeter. Which of the following is true for the transistor?
[2008]
Q.191 Correct
Q.191 In-correct
Q.191 Unattempt
In the circuit below, A and B represent two inputs and C represents the output.

The circuit represents
[2008]
In the circuit below, A and B represent two inputs and C represents the output.

The circuit represents
[2008]
Q.192 Correct
Q.192 In-correct
Q.192 Unattempt
If in a p-n junction diode, a square input signal of 10 V is applied as shown

Then the output signal across RL will be
[2007]
If in a p-n junction diode, a square input signal of 10 V is applied as shown

Then the output signal across RL will be
[2007]
Q.193 Correct
Q.193 In-correct
Q.193 Unattempt
Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate ?
[2007]
Carbon, silicon and germanium have four valence electrons each. At room temperature which one of the following statements is most appropriate ?
[2007]
Q.194 Correct
Q.194 In-correct
Q.194 Unattempt
If the lattice constant of this semiconductor is decreased, then which of the following is correct ?
[2006]
If the lattice constant of this semiconductor is decreased, then which of the following is correct ?
[2006]
Q.195 Correct
Q.195 In-correct
Q.195 Unattempt
A solid which is not transparent to visible light and whose conductivity increases with temperature is formed by
[2006]
A solid which is not transparent to visible light and whose conductivity increases with temperature is formed by
[2006]
Q.196 Correct
Q.196 In-correct
Q.196 Unattempt
If the ratio of the concentration of electrons to that of holes in a semiconductor is
7
5
 and the ratio of currents is
7
4
, then what is the ratio of their drift velocities?
[2006]
If the ratio of the concentration of electrons to that of holes in a semiconductor is
7
5
 and the ratio of currents is
7
4
, then what is the ratio of their drift velocities?
[2006]
Q.197 Correct
Q.197 In-correct
Q.197 Unattempt
The circuit has two appositively connected ideal diodes in parallel. What is the current flowing in the circuit?

[2006]
The circuit has two appositively connected ideal diodes in parallel. What is the current flowing in the circuit?

[2006]
Q.198 Correct
Q.198 In-correct
Q.198 Unattempt
In the following, which one of the diodes reverse biased?
[2006]
In the following, which one of the diodes reverse biased?
[2006]
Q.199 Correct
Q.199 In-correct
Q.199 Unattempt
In a common base mode of a transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The value of the base current amplification factor (β) will be
[2006]
In a common base mode of a transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The value of the base current amplification factor (β) will be
[2006]
Q.200 Correct
Q.200 In-correct
Q.200 Unattempt
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap in (eV) for the semiconductor is
[2005]
The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap in (eV) for the semiconductor is
[2005]
Q.201 Correct
Q.201 In-correct
Q.201 Unattempt
In a common base amplifier, the phase difference between the input signal voltage and output voltage is
[2005]
In a common base amplifier, the phase difference between the input signal voltage and output voltage is
[2005]
Q.202 Correct
Q.202 In-correct
Q.202 Unattempt
When p-n junction diode is forward biased then
[2004]
When p-n junction diode is forward biased then
[2004]
Q.203 Correct
Q.203 In-correct
Q.203 Unattempt
When npn transistor is used as an amplifier
[2004]
When npn transistor is used as an amplifier
[2004]
Q.204 Correct
Q.204 In-correct
Q.204 Unattempt
For a transistor amplifier in common emitter configuration for load impedance of 1kΩ(hfe=50 and hoe=25) the current gain is
[2004]
For a transistor amplifier in common emitter configuration for load impedance of 1kΩ(hfe=50 and hoe=25) the current gain is
[2004]
Q.205 Correct
Q.205 In-correct
Q.205 Unattempt
A strip of copper and another of germanium are cooledfrom room temperature to 80K. The resistance of
[2003]
A strip of copper and another of germanium are cooledfrom room temperature to 80K. The resistance of
[2003]
Q.206 Correct
Q.206 In-correct
Q.206 Unattempt
The difference in the variation of resistance withtemeperature in a metal and a semiconductor arisesessentially due to the difference in the
[2003]
The difference in the variation of resistance withtemeperature in a metal and a semiconductor arisesessentially due to the difference in the
[2003]
Q.207 Correct
Q.207 In-correct
Q.207 Unattempt
In the middle of the depletion layer of a reverse- biasedp-n junction, the
[2003]
In the middle of the depletion layer of a reverse- biasedp-n junction, the
[2003]
Q.208 Correct
Q.208 In-correct
Q.208 Unattempt
At absolute zero, Si acts as
[2002]
At absolute zero, Si acts as
[2002]
Q.209 Correct
Q.209 In-correct
Q.209 Unattempt
By increasing the temperature, the specific resistance of aconductor and a semiconductor
[2002]
By increasing the temperature, the specific resistance of aconductor and a semiconductor
[2002]
Q.210 Correct
Q.210 In-correct
Q.210 Unattempt
The energy band gap is maximum in
[2002]
The energy band gap is maximum in
[2002]
Q.211 Correct
Q.211 In-correct
Q.211 Unattempt
The part of a transistor which is most heavily doped to produce large number of majority carriers is
[2002]
The part of a transistor which is most heavily doped to produce large number of majority carriers is
[2002]
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