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Semiconductor Devices Test - 87
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Semiconductor Devices Test - 87
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  • Question 1/10
    4 / -1
    The electrical resistance of depletion layer is large because
  • Question 2/10
    4 / -1
    What is the current in the circuit shown below?

  • Question 3/10
    4 / -1
    The PN junction diode is used as
  • Question 4/10
    4 / -1
    In the depletion region of an unbiased P–N junctiondiode there are
  • Question 5/10
    4 / -1
    What controls the conduction of PN junction
  • Question 6/10
    4 / -1
    The approximate ratio of resistances in the forward and reverse bias of the PN–junction diode is
    Solutions

  • Question 7/10
    4 / -1
    In a junction diode, the holes are due to
  • Question 8/10
    4 / -1
    In forward bias, the width of potential barrier in a P – N junction diode
  • Question 9/10
    4 / -1
    The cause of the potential barrier in a P – N diode is
  • Question 10/10
    4 / -1
    The dominant mechanism for motion of charge carriers in forward and reverse biased silicon P - N junctions are
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